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FDB3860 N-Channel PowerTrench(R) MOSFET
March 2009
FDB3860
N-Channel PowerTrench(R) MOSFET
100 V, 30 A, 37 m
Features
Max rDS(on) = 37 m at VGS = 10 V, ID = 5.9 A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor`s advanced Power Trench(R) process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion Synchronous Rectifier
D
D
G S TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TA = 25 C (Note 1a) Ratings 100 20 30 6.4 60 96 71 3.1 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.75 40 C/W
Package Marking and Ordering Information
Device Marking FDB3860 Device FDB3860 Package TO-263AB Reel Size 330 mm Tape Width 24 mm Quantity 800 units
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
1
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V 100 104 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 5.9 A VGS = 10 V, ID = 5.9 A, TJ = 125 C VDS = 10 V, ID = 5.9 A 2.5 3.8 -11 31 56 18 37 67 4.5 V mV/C m S
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 1310 100 40 1.7 1740 130 65 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10 V Gate to Source Charge Gate to Drain "Miller" Charge VDD = 50 V, ID = 5.9 A VDD = 50 V, ID = 5.9 A, VGS = 10 V, RGEN = 6 12 6 17 3 21 6.9 5.4 22 12 31 10 30 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 5.9 A (Note 2) (Note 2) 0.7 0.8 35 37 1.2 1.3 56 60 V ns nC
IF = 5.9 A, di/dt = 100 A/s
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a. 40 C/W when mounted on a 1 in2 pad of 2 oz copper b. 62.5 C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting TJ = 25 C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V.
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
2
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
60
VGS = 10 V VGS = 8.0 V VGS = 7.0 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 6.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
3.0
VGS = 6.0 V
50
ID, DRAIN CURRENT (A)
2.5 2.0 1.5
VGS = 6.5 V VGS = 7.0 V VGS = 8.0 V
40 30 20 10 0 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 10 V
VGS = 6.0 V
1.0
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
0.5 0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
2.2
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
100
SOURCE ON-RESISTANCE (m)
ID = 5.9 A VGS = 10 V
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
80
ID = 5.9 A
rDS(on), DRAIN TO
60
TJ = 125 oC
40 20 0
TJ = 25 oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
60 50
ID, DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
IS, REVERSE DRAIN CURRENT (A) VGS = 0 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
10 1 0.1 0.01
TJ = -55 oC TJ = 150 oC TJ = 25 oC
VDS = 10 V
40 30
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
3
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 5.9 A VDD = 50 V
5000
Ciss
VDD = 75 V
8
VDD = 25 V
6 4 2 0 0 5 10 15 20 25
Qg, GATE CHARGE (nC)
CAPACITANCE (pF)
1000
Coss
100
Crss
f = 1 MHz VGS = 0 V
10 0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
35
ID, DRAIN CURRENT (A)
10
IAS, AVALANCHE CURRENT (A)
8 6 4 3
TJ = 100 oC TJ = 25 oC
28
VGS = 10 V
21 14 7
RJC = 1.75 C/W
o
2
TJ = 125 oC
1 0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
10
5
ID, DRAIN CURRENT (A)
10
4
VGS = 10 V
SINGLE PULSE RJC = 1.75 oC/W TC = 25 oC
10
THIS AREA IS LIMITED BY rDS(on)
100 us
10
3
1
SINGLE PULSE TJ = MAX RATED RJC = 1.75 C/W TC = 25 oC
o
1 ms 10 ms DC
10
2
0.1 0.1
1
10
100
300
10 -6 10
10
-5
10
-4
10
-3
10
-2
10
-1
1
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
4
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJC =1.75 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC
0.001 -6 10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 62.5 C/W
(Note 1b)
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
5
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Preliminary Datasheet
FDB3860 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I38
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
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